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| WT-Z224V-AU4 Zener Diode Chips (Dual Pad) for ESD Bidrectional Protection 1. Feature: 1-1 This specification applies to N/P/N silicon zener double diodes chips, Device NO. WT-Z224V-AU4 2. Structure: 2-1. Planar type : N/P/N Diode. 2-2. Electrodes : Top side : Gold pad. Back side : Gold Layer. 3. Size: 3-1. Chip size : 24 mils x 24 mils (609.6 m x 609.6 m). 3-2. Chip thickness :7.87 1.0 mils (200 2.54 m). 3-3. Bonding pad : 19.3 mils x 19.3 mils (490 m x 490 m) . 3-4. Pattern drawing : Refer to the attached drawing. * Including scribing line. The chip size is about 23mil(585 m) after dicing. 4. Electrical Characteristics (TA=25C) Parameter Symbol Idf Leakage Current Idr Condition V=4V H=0mW/cm2 V=5V H=0mW/cm2 V=4V H=0mW/cm2 V=5V H=0mW/cm2 Izf=5mA H=0mW/cm2 Izf=5mA H=0mW/cm2 Min. Typ. Max. Unit nA A nA A 5.5 5.3 - - 100 0.5 100 0.5 7.0 Vz(forward) Zener Voltage V 6.8 750 mA KV Vz(reverse) Maximum Zener Current Electrostatic Discharge IZM ESD HBM MIL-STD883 8.0 - 5. Annotation : 5-1. Parallel with one LED 5-2. Single pad (one wire bonding applied only) 5-3. Double direction Zener diode protection 6. Drawing: Bonding pad (Top View) Top side N P N 7. Protection Circuit: LED PROTECTION ZENER Back Side Bonding pad WEITRON TECHNOLOGY CO., LTD. TEL:886-2-29148158 FAX:886-2-29106796 Http://www.weitron.com.tw Rev.A 08-Mar-07 |
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